Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm SiC Film (3C) on Si Wafer video credit: Energy Storage CDT

video credit: Energy Storage CDT (University of Southampton)

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Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm SiC Film (3C) on Si Wafer video credit: Energy Storage CDTThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 500 nm ( 5000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 0. 01 0. 1 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side