Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm In

Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm InSingle crystal Si, (CZ) Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (111)with 4 deg. off, Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate

SPECIFICATIONS

Surface roughness:   < 5A

Die10-S32 is a High Throughput 32-position pressing set

No warranty is provided on the pressing die for any damage

25" ( Arbor) SiC cutting blade are included

P2O5 20-60%

Orientation:             (100)

The conductivity of Lithium Ions will not be affected much by water and mild acids

The rotary drum is made of SS304

of PTFE Body (liner): 18mm

Overall size: 165mm x 65mm x 203mm

Material:                                      Natural ABS With ESD Coating