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Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110
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Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110
$125.92
Description
Shipping Weight & Dimensions 110 lbs
LCD display with user timer settings (Continuous/timer)
4 mm x 25
Do not use an air compressor when operating the unit in the glove box
Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110Ge Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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