MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1107 (Reapproved 0718) - Superseded

MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1107 (Reapproved 0718) - SupersededThis Test Method covers a procedure suitable for interlaboratory comparisons of layer thickness. This Test Method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or by at least one order of magnitude in resistivity. The method described is destructive in nature but is more widely applicable than the alternative infrared method, SEMI MF95. For layers with

XMLメッセージ通信に関する仕様は確立された，公開され照会し得る，XMLメッセージ通信に関する現実的な関係業界スタンダードを複数利用する。SEMIスタンダードへ応用する際，個々の状況でメッセージ通信に直接要求される必要性がある場合にのみ，既存の関係業界スタンダードを拡張するに止めている。本スタンダードは既存のスタンダードの焼き直しや競合する仕様を作り出そうとするものではないが，既存のスタンダードと整合し使用例を引用することは意図している。

2 This standard specifies procedures to measure extractable metal impurities from perfluoroalkoxy alkane (PFA) and other fluorinated materials and from high purity liquid distribution components

This Standard describes a specific device structure and behavior of a generic equipment networked sensor

FOBIT or open cassette using automated methods

SEMI D78-0224 (technical revision)

which is used to rank the pitting corrosion resistance of wetted surfaces of tubing or test coupons of representative finished surfaces intended for use in corrosive gas systems

but not limited to

Vendor independence and openness are guaranteed by the CC-Link Partner Association

This Standard provides guidance for development and delivery of training supplied without using dedicated training equipment

SEMI M56-1018 (Reapproved 1023)

Originally published December 1996

The actual size may be further restricted by an application document