MS01300 - SEMI MS13 - Guide for Use of Test Patterns for Characterizing a Deep Reactive Ion Etching (DRIE) Process StdPbc-0718 SEMI F32 — Test Method

SEMI F32 — Test Method for Determination of Flow Coefficient for High Purity Shutoff Valves

本仕様では，周波数，変調，データレート，データフォーマット，リード／ライト機能，メモリ機能などのパラメータの要求条件を記載する。

SEMI E81 — Provisional Specification for CIM Framework Domain Architecture

This standard is intended to set an appropriate level of specification that places minimal limits on innovation while ensuring modularity and interchangeability at common mechanical interfaces

MS01300 - SEMI MS13 - Guide for Use of Test Patterns for Characterizing a Deep Reactive Ion Etching (DRIE) Process StdPbc-0718 SEMI F32 — Test MethodDeep reactive ion etching (DRIE) is widely used in MEMS fabrication processes for creating high aspect ratio anisotropic features. Further, the etch performance is dependent on open area (OA), that is, the amount of area subject to the etch process, which can range from 1% to 60%. It is also dependent on geometric pattern loading effects, the depth of the etch, the materials to be etched and their preparation. The optimal parameters values chosen vary