Home
»
»
Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm Pressing Dies MTI-CU-GKT
Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm Pressing Dies MTI-CU-GKT
$40.52
Description
MTI-CU-GKT
no agglomeration
so you’re not locked into a single tip supplier
Sampling Frequency
Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm Pressing Dies MTI-CU-GKTThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 285 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x 10 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
, 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm Pressing Dies MTI-CU-GKT){kind=link}