Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US Dip Coaters Operation Flowchart: Chamber Evacuation/vacuum ->

Operation Flowchart: Chamber Evacuation/vacuum -> Needle Down -> Pierce the Excess Area of the Pouch -> Needle Up -> De-gas the Pouch -> Heat-Sealing -> Release to atmospheric pressure Working Voltage AC110V or 220V

51 g/cm3 Melting Point  894 oC  Hardness  2 Mohs Hydroscopicity little Afterglow (after 6ms)   0

Membrane Area :               165 x 80 x 20 mm -  Can support component up to 3" dia

Power Requirement AC 380V

Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US Dip Coaters Operation Flowchart: Chamber Evacuation/vacuum ->Single crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 1 + 0. 025 mm Orientation: (111) + 1o Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner