Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20)

Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20)Ge Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 30 A ( by AFM) Doping: Un Doped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

5mm(D) x 5mm(H)

99% (excellent anti-corrosive)

BST8-WA is an eight-channel battery analyzer to analyze small coin cells and cylindrical batteries from 0

Customer can consider the following BST8-12

2'' Tube Flange 60mm O

NOTE: Picture is for showing both sides of the blank flange

- 3 seconds heating time

To build a DIY electrospinning system

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