VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm Orientation 210 Heatable Ultrasonic Cleaner

Heatable Ultrasonic Cleaner

200 × 40 H (mm)

Optical grade single crystal LiTaO3

350 Pa  Features & Structure

VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm Orientation 210 Heatable Ultrasonic CleanerGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: As Doped Conductor type: N type Resistivity: 0. 173 0. 25 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier concentration: 0. 09x10^17 1. 63x10^17 c. c