Al2O3- Sapphire Wafer, C-plane (0001), 10x10x1mm, 1 SP - ALC101010S1 Max. current +12 A which can mill 32 samles

which can mill 32 samles per bactch via 4 jars )

Size: 10 x 10 x 0

Whole set  pressing die includes One 60mm  I

Gross Weight: 20g (Tabs with Box)

Al2O3- Sapphire Wafer, C-plane (0001), 10x10x1mm, 1 SP - ALC101010S1 Max. current +12 A which can mill 32 samlesFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 1 mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A 1 sides polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer