Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm LiF To protect the environment &

To protect the environment & human health

Air compressor

0 um Specific Surface Area

4E17/ cm3

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm LiF To protect the environment &Thermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 50 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 0. 01 0. 05 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 5 x 5 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related