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Si Wafer (110) 2" dia x 0.5 mm t, 1SP, FZ, Undoped, resistivities: >1,000 ohm-cm - SiUe50D05C1R1000 Max. number of Channel 8 Dimension: 1" x 3" x
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Si Wafer (110) 2" dia x 0.5 mm t, 1SP, FZ, Undoped, resistivities: >1,000 ohm-cm - SiUe50D05C1R1000 Max. number of Channel 8 Dimension: 1" x 3" x
$62.16
Description
Dimension: 1" x 3" x 0
This provides more accuracy for measuring low emissivity targets
Back surface: Optical grade polish
Mobility >(3
Si Wafer (110) 2" dia x 0.5 mm t, 1SP, FZ, Undoped, resistivities: >1,000 ohm-cm - SiUe50D05C1R1000 Max. number of Channel 8 Dimension: 1" x 3" xSingle crystal Si, Conductive type: Undoped Resistivity: >1000 ohm. cm Size: 2" diameter x 0. 5mm Orientation: (110) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
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