VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp S

VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp SGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 5mm Polishing: one side polished Doping: Si doped Conductor type: S C N Carrier Concentration: (7. 2 11. 7) x 10^17 cm^3 Mobility: 2170 2650 cm^2 V. S EPD: <5000 cm^2 resistivity: (2. 56 3. 55)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Density:                                                 7

Maintenance-free brushless DC motors

Polish:         two sides   EPI polished by CMP tecnology with less sub-surface lattice damage

16" Tube Length 79" (2000mm) Material 304 Stainless Steel Note 2 pcs /package Shipping Weight & Dimension 5 lbs

especially the lead screw by WD40 lubricant after each use

Specification Material Nickel 99

000 Entries

Te Doped )

Demo Video How to make cylindrical cell

85% Specific heat capacity 836 J/kg · K Linear Thermal Expansion () 10 ~ 12 x 10^-6/K (

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Thermal Expansion:         a a= 16