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Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers Ingestion-build-47182 BS EN 50377-8-5 specifies the
Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers Ingestion-build-47182 BS EN 50377-8-5 specifies the
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Description
BS EN 50377-8-5 specifies the plug features which consists of a cylindrical composite ferrule
ISO 7146-1 can be useful as it:
BS ISO 6196 Micrographics
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Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers Ingestion-build-47182 BS EN 50377-8-5 specifies the1 Scope This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time dependent dielectric breakdown (TDDB) test for inter metal layers applied in semiconductor devices.
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