VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm Orientation 110 Resistivity: (1

Resistivity:                                                         (1

Three electrode materials: Glod

01 Ohms/cm

Size:                               2" diameter x 0

VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm Orientation 110 Resistivity: (1Ge Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100mm dia x 400 microns Surface Polishing: Two sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Carrier Concentration: (0. 64 6. 67) x10^18 c. c EPD: <500 cm Resistivity: 0. 0038 0. 0158 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)