Si wafer (100) 2" dia x 0.5mm, 2SP, P type, B doped R:0.1-1.0 ohm.cm - SiBa50D05C2R01 active surface area 25 cm2 Other Sapphire

Other Sapphire

7233 c = 7

The operator sets the blade clearance by adjusting the micrometers and sets up a film width to be coated by adjusting blade width

Hexoloy  SG Silicon  Carbide Ceramic Substrate

Si wafer (100) 2" dia x 0.5mm, 2SP, P type, B doped R:0.1-1.0 ohm.cm - SiBa50D05C2R01 active surface area 25 cm2 Other SapphireSingle crystal Si Conductive type: P type ( B doped) Resistivity: 0. 1 1. 0 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 5mm Orientation: (100) Polish: Two side polished ( 2 SP ) Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers